A B2B E-Commerce Model Based on Web Service--《Jiangsu Machine Building & Automation》2003年02期
A B2B E-Commerce Model Based on Web Service
si, LIAO Wen
he, TIAN Hong
(Nanjing University of Aeronautics and Astronautics, JS Nanjing 2 10016, China)
This paper gave a brief introduction of the contents and characters o f Web Service, discussed the di
sadvantages of the traditional NC simulation s ystem, proposed and analyzed a NC simulation service system model based on Web S ervice in detail, then put forward the emphases and difficulties of present r esearch.
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(C)2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reservedMicrostructure and optic-electric performance of SiGe/Si heterostructures
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27.97University of Electronic Science and Technology of China+ 134.49University of Electronic Science and Technology of ChinaShow
more authorsAbstractIn order to reduce dark current density for the silicon-based Ge infrared detector, the best way is to develop high quality buffer layers with low dislocation density as well as high relaxation degree. In this paper, Si 1-x Ge x /Si heterostrutures have been grown to study the Ge composition, roughness influenced dislocation density and strain relaxation. High resolution XRD results and swing curve (224) analysis indicate that the strain relaxation of thin film after annealing is larger than 90%. The film dislocation density is lower than 8.0×10 5 /cm 2 , while the average roughness changes between 1.4 nm and 2.0 nm. Such buffer layer can be applied to grow high quality Ge alloy infrared detector.Do you want to read the rest of this conference paper?Request full-text
CitationsCitations0ReferencesReferences11ABSTRACT: Vertical incidence GeSn/Ge multi quantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7 %. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/Ge MQW was kept constant at 10 nm. The well width was varied between 6 nm and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs. Full-text · Article · Aug 2014 +1 more author...ABSTRACT: A method of growing high-quality epitaxial Ge layers on a Si(100)
substrate is reported. In this method, a 0.8 μm
Si0.1Ge0.9 layer was first grown. Due to the large
lattice mismatch between this layer and the Si substrate, many
dislocations form near the interface and in the lower part of the
Si0.1Ge0.9 layer. A 0.8 μm
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were subsequently grown on the Si0.1Ge0.9 layer.
The formed interfaces of
Si0.05Ge0.95/Si0.1Ge0.9 and
Ge/Si0.05Ge0.95 can bend and terminate the
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process was also performed for each individual layer. Experimental
results show that the dislocation density in the top Ge layer can be
greatly reduced, and the surface is very smooth, while the total
thickness of the structure is only 2.6 μm.Article · May 2003 +1 more author...ABSTRACT: The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si{sub 0.7}Ge{sub 0.3} buffer layer structures for high electron- and hole-mobility devices has been determined, using high resolution x-ray diffraction. A 1.4-{mu}m-thick layer, step graded to {ital x}=0.35, is sufficiently thick so that the residual strain in a uniform composition Si{sub 0.33}Ge{sub 0.67} layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.Article · Oct 1995 +1 more author...ABSTRACT: We report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55 mum. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3 dB bandwidth under 2 V bias are close to 10, 18, 20, and 35 GHz for electrode spacings equal to , 700, and 500 nm, respectively.Article · Dec 2005 +1 more author...ABSTRACT: We report on a Si &sub&1-x&/sub& Ge &sub&x&/sub&/ Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 μm. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/μm&sup&2&/sup&. The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 μm and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 μm is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang etal [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. Full-text · Article · Aug 2000 +1 more author...ABSTRACT: The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si &sub& 0.85 &/sub& Ge &sub& 0.15 &/sub& /Si epitaxial layers as low as ~10&sup&4&/sup&
cm &sup& -2 &/sup&. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition. (C) 1997 American Institute of Physics. Full-text · Article · Jul 1997 +1 more author...Article · Oct 2017 Article · Oct 2017 +1 more author...Article · Oct 2017 +1 more author...Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.This publication is from a journal that may support self archiving.Last Updated: 01 Oct 17联系我【网贷吧】_百度贴吧
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登录百度帐号推荐应用RESEARCH OF B2B E-COMMERCE SYSTEM MODEL BASED ON WEB SERVICE--《南京航空航天大学学报(英文版)》2003年01期
RESEARCH OF B2B E-COMMERCE SYSTEM MODEL BASED ON WEB SERVICE
si, LIAO Wen
he, TIAN Hong, SHEN Jian
(College of Mechanical and Electrical Enginee ring, NUAA
29 Yudao Street, Nanjing, 210016,P.R.China)
Commerce is one of
the most potential electronic commerce forms at present. But since traditional
Commerce system lacks an unified standard and solution of basic architectur e a nd interface, it has many shortcomings such as poor reusability and poor extensi bility. In order to solve the problem, combined with Web Service technology, a B 2B E
Commerce system model based on Web Service is proposed and analyzed. The m odel can combine relatively independent Web Service on Intranet and Internet by
constructing core application program. As a part of supply chain, it can also pr ovide a standard interface for other applications such as ERP/CRM/SCM, etc. Th er efore, B2B E
Commerce system with this form is easy for development, integratio n and maintenance. Finally, a solution of B2B E
Commerce system based on Web Se rvice is propounded by introducing an instance.
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【Co-references】
Chinese Journal Full-text Database
(Computer Center, North China Univ. of Tech., 100041, Beijing, China);[J];Journal of North China University of T2002-01
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LIU Jian-fen,ZHANG Rui-zhe,ZHANG Jun-feng (Pingdingshan Teachers' College, Pingdingshan 467002, China);[J];Journal of Pingdingshan Institute of T2003-02
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(C)2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved